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SILICON CARBIDE SUBSTRATE, SILICON CARBIDE INGOT, AND

20121122-A method of manufacturing a silicon carbide ingot having highly uniform characteristics includes a preparation step of preparing a base subs

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Thermodynamic Analysis of the Growth of Silicon Carbide Ingots in a Reducing Atmospheredoi:10.1134/S002016851811002XInorganic Materials

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201918-A new method of electric discharge machining (EDM) is proposed for slicing a large silicon carbide (SiC) ingot in order to realize low kerf

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SILICON CARBIDE INGOT AND METHOD FOR MANUFACTURING

In the silicon carbide ingot, the end surface and the end surface face each other in a growth direction, and a gradient of a nitrogen concentration in

The main defects of silicon carbide ingots and epitaxial layers

The main defects of silicon carbide ingots and epitaxial layersThe work was done in oldest electrotechnical university of Europe - at the Saint Petersburg

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SILICON CARBIDE CRYSTAL INGOT, SILICON CARBIDE WAFER, AND

A silicon carbide crystal ingot (1) according to one embodiment of the invention includes first crystal layers (3) and second crystal layers (4), each

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A mechanism to explain the formation and distribution of SiC in industrial silicon directionally solidified ingots, based on the thermodynamics of SiC, is

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【PDF】(54) MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE

MONOCRYSTALLINE SILICON CARBIDE INGOT, MONOCRYSTALLINE SILICON CARBIDE WAFER AND METHOD OF MANUFACTURING THE SAME SILICIUMCARBIDEINKRISTALLSTAB, SILICIUMCARB

650V/4A Silicon Carbide Power Schottky Barrier Diode G3S06504

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