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A three-stage scheme of the silicon carbide thermodestruction resulting in surface graphitization, which was proposed earlier (based on structural

US Patent for Method for manufacturing silicon carbide single

A method for manufacturing a silicon carbide single crystal includes: packing a silicon carbide source material into a crucible, the silicon carbide source

Silicon Carbide Semiconductor Device with Trench Gate

A semiconductor device includes trench gate structures that extend from a first surface into a semiconductor body of silicon carbide. The trench gate

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Sustained molecular oxygen activation by iron doped silicon carbide (Fe/SiC) was investigated under microwave (MW) irradiation. The catalytic performance of

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Obermayer, D.; Damm, M.; Kappe, C.Oliver., 2013: Simulating microwave chemistry in a resistance-heated autoclave made of semiconducting silicon carbide

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The present invention relates to a method for making a protective coating containing silicon carbide on at least a portion of the surface of a substrate

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Interacting with C-terminated Surface of Silicon Carbide-

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Modeling of Structural Defects in Silicon Carbide | Springer

Abstract— This paper reports DFT calculations of the electron density in pure and imperfect silicon carbide clusters. The local levels produced in the band

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A manufacturing method of a silicon carbide-based honeycomb structure, including a firing step of introducing extruded honeycomb formed bodies containing a

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Irradiation-Induced Defects in Silicon Carbide | Springer

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